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The Renesas Electronics Corporation 6116LA70DB is a 16-kbit asynchronous static random-access memory organized as 2K x 8. It operates within a voltage range of 4.5 V to 5.5 V, with a maximum supply current of 90 mA. The device features a 70 ns access time and supports parallel interfaces. It is housed in a CDIP-24 package designed for through-hole mounting. The component functions across an extended temperature range from -55 °C to +125 °C, ensuring reliability in demanding environments.
Verify the specific package type and lead configuration before procurement, as the 6116 series includes both plastic DIP and ceramic DIP variants. Confirm the exact suffix designation matches the required thermal and mechanical specifications for your assembly process. Ensure compatibility with existing TTL-compatible logic levels in the target design environment.
Select this component when military-grade temperature ranges (-55 °C to +125 °C) are mandatory for the application. The 70 ns access speed suits moderate-speed asynchronous data storage needs. Consider the CDIP-24 package if through-hole mounting is preferred over surface-mount alternatives within the same family.
This part belongs to the 6116 series of 5V CMOS SRAMs manufactured by Renesas Electronics. The series offers various access speeds and packaging options, including SOIC and PDIP formats. The 'LA' designation typically indicates low-power characteristics, while the 'DB' suffix specifies the ceramic dual in-line package variant suitable for high-reliability applications.
Publicly confirmed substitute part numbers for the 6116LA70DB are not available in the provided documentation. Verify cross-reference availability with original equipment manufacturer databases or authorized distributors for equivalent military-grade SRAM components.