6116LA70DB

6116LA70DB

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:d921cad93b41 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Kbit
  • Memory Organization:2K x 8
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:70ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:24-CDIP (0.600", 15.24mm)
  • Supplier Device Package:24-CDIP
  • Access Time:70 ns

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6116LA70DB

Overview

The Renesas Electronics Corporation 6116LA70DB is a 16-kbit asynchronous static random-access memory organized as 2K x 8. It operates within a voltage range of 4.5 V to 5.5 V, with a maximum supply current of 90 mA. The device features a 70 ns access time and supports parallel interfaces. It is housed in a CDIP-24 package designed for through-hole mounting. The component functions across an extended temperature range from -55 °C to +125 °C, ensuring reliability in demanding environments.

Feature Summary

  • Provides low-power standby mode with battery backup data retention capability consuming only 1 μW to 4 μW when operating off a 2V battery.
  • Features fully static asynchronous circuitry that requires no clocks or refreshing for operation.
  • All inputs and outputs are TTL-compatible for broad interface integration.

Applications

  • Military grade electronic systems requiring extended temperature stability
  • Industrial control units utilizing asynchronous memory architectures
  • Embedded storage solutions needing low-power standby modes

Procurement Notes

Verify the specific package type and lead configuration before procurement, as the 6116 series includes both plastic DIP and ceramic DIP variants. Confirm the exact suffix designation matches the required thermal and mechanical specifications for your assembly process. Ensure compatibility with existing TTL-compatible logic levels in the target design environment.

Selection Notes

Select this component when military-grade temperature ranges (-55 °C to +125 °C) are mandatory for the application. The 70 ns access speed suits moderate-speed asynchronous data storage needs. Consider the CDIP-24 package if through-hole mounting is preferred over surface-mount alternatives within the same family.

Part Context

This part belongs to the 6116 series of 5V CMOS SRAMs manufactured by Renesas Electronics. The series offers various access speeds and packaging options, including SOIC and PDIP formats. The 'LA' designation typically indicates low-power characteristics, while the 'DB' suffix specifies the ceramic dual in-line package variant suitable for high-reliability applications.

Replacement Considerations

Publicly confirmed substitute part numbers for the 6116LA70DB are not available in the provided documentation. Verify cross-reference availability with original equipment manufacturer databases or authorized distributors for equivalent military-grade SRAM components.

6116LA70DB6116LA70DB

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