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The IDT6116LA70TDB is a standard static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology. It features a memory organization of 2K words by 8 bits, providing a total storage capacity of 16 kilobits. The device operates asynchronously with a maximum access time of 70 nanoseconds. It utilizes CMOS technology and is housed in a 24-lead plastic dual in-line package (PDIP). The component supports an operating temperature range from -55°C to +125°C.
Verify the specific suffix 'TDB' against official manufacturer documentation to confirm package type and material composition. Ensure compliance with RoHS directives if required, as lead-free status varies by manufacturing batch. Confirm availability through authorized distributors, noting that older SRAM components may have limited stock or end-of-life status.
Select this component when a 2Kx8 SRAM configuration with 70ns speed is required in a through-hole DIP package. Consider the -55°C to +125°C temperature range suitability for industrial or military environments. Compare against other 6116 series variants for different access times or package styles if space or performance constraints differ.
This part belongs to the IDT 6116 family of standard SRAMs. Similar parts include the 6116LA35PG and 6116LA55PB, which offer faster access times but may differ in package or pricing. The 6116SA70TDB is a Renesas equivalent with similar specifications but different branding.
Direct substitutes include the IDT6116LA70PB and IDT6116SA70TDB. Verify pin compatibility and electrical characteristics before replacement.