6116LA90DB

Overview

The 6116LA90DB is a high-speed, low-power 16K asynchronous SRAM manufactured by Renesas Electronics Corporation. It features a memory organization of 2K x 8 bits, providing a total capacity of 16 Kbit. The device utilizes a parallel interface with a maximum access time of 90 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and is housed in a 24-lead CDIP package.

Feature Summary

• Provides high-speed data access with a 90 ns cycle time for efficient system performance.
• Designed for low-power operation to reduce energy consumption during active use.
• Utilizes a standard parallel interface for straightforward integration into existing digital circuits.

Applications

• Embedded systems requiring fast volatile data storage
• Industrial control equipment needing reliable memory buffers
• Consumer electronics utilizing asynchronous static random access memory

Procurement Notes

Verify the specific package type and speed grade against project requirements before ordering. Confirm that the 24-CDIP form factor fits the designated footprint on the printed circuit board. Ensure compatibility with the 4.5 V to 5.5 V power supply rails used in the target application design.

Selection Notes

Select this component when a 16 Kbit capacity and 90 ns access speed are required. Consider the 24-CDIP package constraints regarding board space and mounting style. Evaluate if the asynchronous parallel interface meets the timing requirements of the host processor or controller.

Part Context

This part belongs to the 6116LA series of asynchronous SRAMs from Renesas. The series offers various speed grades and packaging options to suit different performance and physical layout needs. The LA suffix typically denotes specific speed and package characteristics within this product line.

FAQ

What is the memory organization of the 6116LA90DB?

The memory is organized as 2K words by 8 bits, totaling 16 Kbit.

What is the maximum access time for this SRAM?

The maximum access time is 90 nanoseconds.