6116LA90TDB

Overview

The 6116LA90TDB is a 16-kbit asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It features a memory organization of 2K x 8 bits and supports a parallel interface with a maximum access time of 90 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and draws a maximum power supply current of 90 mA. It is designed for through-hole mounting in a CDIP-24 package. The component supports single data rate (SDR) storage and functions across an extended industrial temperature range from -55 °C to +125 °C.

Feature Summary

• Provides high-speed asynchronous data access via a parallel interface.

Applications

• Industrial control systems requiring wide temperature tolerance.

Procurement Notes

Verify the specific RoHS compliance status, as documentation indicates non-compliance for this variant. Confirm that the CDIP-24 through-hole package matches the target PCB footprint. Check for any export restrictions or additional documentation requirements mandated by US export regulations before finalizing procurement orders.

Selection Notes

Select this component when a 16-kbit SRAM with a 90 ns access time is required for through-hole assembly. Ensure the design accommodates the 4.5 V to 5.5 V operating voltage range and the 90 mA maximum current draw. Verify compatibility with the CDIP-24 package dimensions and the -55 °C to +125 °C operating temperature specifications.

Part Context

This part belongs to the 6116SA90 series of standard SRAMs. It shares functional similarities with other variants in the family but differs in packaging and specific electrical characteristics. The manufacturer has indicated end-of-life status for this product line, signaling potential discontinuation and the need for long-term supply planning.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.