6116LA90TDB

Overview

The IDT 6116LA90TDB is a standard asynchronous SRAM memory integrated circuit manufactured by Integrated Device Technology. It features a memory density of 16Kbit, organized as 2K words by 8 bits. The device offers a maximum access time of 90 ns and utilizes CMOS technology. It is housed in a 24-CDIP package with parallel interface capabilities. The component operates within an extended temperature range of -55°C to 125°C.

Feature Summary

• Asynchronous operation for flexible system integration
• CMOS technology ensuring low power consumption
• Extended industrial temperature rating for harsh environments

Applications

• Industrial control systems requiring reliable data storage
• Embedded applications with wide temperature exposure
• Parallel memory interfaces in legacy hardware designs

Procurement Notes

Verify the specific package variant, as the 6116LA90 series includes both LCC-32 and CDIP options. Confirm lead compliance status, as some variants are identified as non-Rohs compliant. Ensure the ordering suffix matches the required physical footprint and pin configuration for your PCB design.

Selection Notes

Select this component when a 16Kbit capacity with 90ns speed is required in a through-hole package. Compare against the 6116LA35PG if faster access times are needed, or the 6116LA90L32B if a surface-mount LCC-32 package is preferred. Verify voltage compatibility with the target system logic levels.

Part Context

This part belongs to the IDT 6116LA family of static random-access memories. The family provides various access speeds and packaging options, including plastic DIP and ceramic dual in-line packages. These devices are designed for general-purpose memory applications where moderate speed and high reliability are prioritized.

Replacement Considerations

Potential substitutes include the IDT6116SA90L32BG8 for surface mount needs or the IDT6116LA35PG for faster performance in a similar DIP format. Verify pinout compatibility before substitution.