6116SA20SOG8

Overview

The Renesas Electronics Corporation 6116SA20SOG8 is a 16-kbit asynchronous static random-access memory organized as 2K x 8. It features a parallel interface with a maximum access time of 20 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 24-SOIC package. It is designed for commercial temperature ranges from 0°C to +70°C.

Feature Summary

• Asynchronous SRAM architecture requiring no clocks or refreshing
• Reduced power standby mode capability
• TTL-compatible inputs and outputs

Applications

• General-purpose data storage in embedded systems
• Buffer memory in microcontroller-based designs
• Cache memory applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation. Check for alternative packages if lead availability is constrained. Validate pinout compatibility during integration planning.

Selection Notes

Select this part for low-density, high-speed volatile memory needs. Ensure system voltage aligns with the 4.5V to 5.5V specification. Consider thermal management within the 0°C to +70°C operating range. Evaluate package constraints against PCB layout requirements.

Part Context

This component belongs to the 6116SA series of CMOS SRAMs. It shares architectural similarities with other variants like the 6116LA25SOGI8 but differs in speed grade and temperature rating. The series provides standard parallel interface solutions for legacy and modern embedded applications.

Replacement Considerations

Publicly confirmed substitutes include 6116LA25SOG8 and 6116LA25SOGI8. Verify electrical parameter compatibility before substitution.