6116SA20TDB

Overview

The IDT6116SA20TDB is a 16K-bit (2K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates within a supply voltage range of 4.5V to 5.5V and features a maximum access time of 20ns. The device utilizes a parallel interface and is housed in a 24-pin Ceramic Dual In-Line Package (CDIP). It supports an industrial temperature range from -55°C to +125°C, ensuring reliable performance in demanding environments.

Feature Summary

• Fully static asynchronous circuitry requiring no clocks or refreshing for operation
• Reduced power standby mode with battery backup data retention capability
• All inputs and outputs are TTL-compatible
• Military grade product availability

Applications

• Industrial control systems operating in extreme temperatures
• Military-grade electronic equipment
• High-reliability data storage applications
• Battery-backed memory subsystems

Procurement Notes

Verify the specific suffix TDB confirms the CDIP package and extended temperature range (-55°C to +125°C), as standard commercial variants may differ. Confirm RoHS compliance status, as military or legacy ceramic packages often deviate from standard lead-free requirements. Check current lifecycle status, as older SRAM families frequently face end-of-life constraints. Ensure the ordering part number matches the exact speed grade (20ns) required for the target system timing.

Selection Notes

Select this component when high-temperature stability and radiation hardness are critical, distinguishing it from standard plastic-packaged SRAMs. The 20ns access speed suits moderate-speed parallel data interfaces. Consider the physical size and mounting requirements of the CDIP package compared to surface-mount alternatives. Verify that the 5V logic levels align with the system's I/O standards, noting the TTL compatibility of all pins.

Part Context

This part belongs to the 6116 family of 16K-bit CMOS SRAMs. The 'SA' designation typically indicates the military/extended temperature variant, while 'TDB' specifies the ceramic dual in-line package. This family provides low-power operation and is designed for applications requiring non-volatile-like behavior through battery backup, serving as a bridge between volatile RAM and slower non-volatile memories in specialized sectors.

Replacement Considerations

Public confirmed substitute part numbers: IDT6116SA20SO8 (SOIC package, same electrical specs), IDT6116SA70TDB (70ns speed, CDIP package). Verify pinout compatibility before substitution.