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Product Detailed Parameters
- Description：IC SRAM 16KBIT PARALLEL 24SOIC
- Series：-
- Mfr：IDT, Integrated Device Technology Inc
- Package：Bulk
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：16Kbit
- Memory Organization：2K x 8
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：25ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package：24-SOIC
- Access Time：25 ns
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Overview
The IDT6116SA25SOGI is a 16Kb (2K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 25 ns and a write cycle time of 25 ns. The device operates on a single 5V power supply ranging from 4.5V to 5.5V and supports surface-mount installation in a 24-SOIC package (0.295 inch / 7.50 mm width). It is rated for an operating temperature range of -40°C to +85°C.
Feature Summary
- Asynchronous parallel SRAM architecture providing 16Kb storage capacity organized as 2K words by 8 bits.
- High-speed data access with a specified 25 ns access time and write cycle duration.
- Single 5V voltage operation compatible with standard logic levels.
- Industrial-grade thermal stability supporting extended temperature environments.
Applications
- Embedded systems requiring fast local data buffering
- Industrial control units needing reliable volatile memory
- Telecommunications equipment signal processing
Procurement Notes
Verify the manufacturer designation, as this component is currently produced under Renesas Electronics Corporation following corporate acquisitions. Confirm the specific suffix 'GI' corresponds to the 24-SOIC package variant and industrial temperature rating (-40°C to +85°C). Check current lifecycle status, as older IDT-branded parts may be subject to discontinuation notices or last-time-buy deadlines.
Selection Notes
Select this component when a 16Kb asynchronous SRAM with 25 ns speed is required in a compact surface-mount format. Ensure the design accommodates the 4.5V to 5.5V supply range and that the 24-SOIC footprint matches the PCB layout. Consider the industrial temperature range if the application environment exceeds commercial limits.
Part Context
This part belongs to the IDT 6116 family of high-speed SRAMs. The 'SA' designation typically indicates standard CMOS technology, while '25' denotes the 25 ns speed grade. The 'SO' prefix identifies the SOIC package style, and 'GI' specifies the lead-free, halogen-free industrial temperature variant.
Replacement Considerations
Official cross-references include the 6116LA25SOGI and 6116SA20SOGI from Renesas Electronics Corporation. Verify pin compatibility and electrical specifications before substitution.
