6116SA25TDB

Overview

The IDT6116SA25TDB is a 16K-bit (2K x 8) asynchronous static random-access memory manufactured by Renesas Electronics Corporation. It operates on a single 4.5V to 5.5V power supply and features a 25 ns access time. The device utilizes TTL-compatible inputs and outputs with fully static circuitry, eliminating the need for clocks or refreshing. It includes a reduced power standby mode and is housed in a 24-pin Ceramic Dual In-Line Package (CDIP).

Feature Summary

• Fully static asynchronous architecture requiring no clock signals or refresh cycles.
• TTL-compatible input and output logic levels for direct interfacing.
• Reduced power standby mode for energy conservation.
• Single 5V CMOS power supply operation.

Applications

• High-speed data buffering in industrial control systems.
• Secondary cache memory for microprocessor-based designs.
• Storage applications in military-grade electronic equipment.
• General-purpose volatile memory in embedded systems.

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm package integrity as CDIP units may be subject to long-term storage conditions. Ensure compatibility with existing PCB footprints and voltage levels before integration into new designs.

Selection Notes

Select this component for legacy systems requiring 5V SRAM with ceramic packaging. Compare against plastic SOIC variants if weight reduction is critical. Verify temperature range requirements against commercial or industrial grades available within the 6116 family.

Part Context

This part belongs to the 6116 series of 16K-bit CMOS SRAMs. It shares architectural similarities with other members like the 6116SA20 and 6116LA25 but differs in speed grade and package material. The CDIP package offers robustness suitable for harsh environments compared to standard plastic packages.

Replacement Considerations

• IDT6116SA25TPGI