6116SA35TDB

Overview

The IDT6116SA35TDB is a standard asynchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 16K bits, organized as 2048 words by 8 bits. The device operates with a maximum access time and write cycle time of 35 nanoseconds. It utilizes CMOS technology and is housed in a 24-pin ceramic dual in-line package (CDIP). The component supports asynchronous operation modes and includes common I/O types for data transfer.

Feature Summary

• Standard asynchronous SRAM architecture requiring no clocks or refresh cycles
• CMOS technology enabling low-power operation and battery backup capabilities
• Dual-port configuration supporting simultaneous read and write operations

Applications

• Multiprocessing systems requiring high-speed data buffering
• Rate buffer applications in communication interfaces
• Industrial control systems operating within extended temperature ranges

Procurement Notes

Verify the specific package variant, as the model suffix indicates a ceramic DIP construction which may differ from plastic SOIC versions. Confirm RoHS compliance status, as older CDIP variants often lack lead-free certification. Ensure the supplier provides traceability documentation for military-grade specifications if required for the application environment.

Selection Notes

Select this component when a robust ceramic package is necessary for harsh environments. Compare against plastic SOIC alternatives like the IDT6116SA35SOI8 if weight and cost are primary constraints. Verify that the 35ns speed meets system timing requirements and that the 5V supply voltage aligns with the target logic family compatibility.

Part Context

This part belongs to the IDT6116 series of 16K-bit SRAMs. It shares functional similarities with other asynchronous SRAMs but is distinguished by its specific 35ns speed grade and ceramic packaging. The series typically offers options for commercial, industrial, and military temperature ranges, providing flexibility for various deployment scenarios.

Replacement Considerations

Direct pin-compatible replacements include other 16Kx8 SRAMs with 35ns access times in 24-pin packages. Verify electrical characteristics such as standby current and output drive strength before substitution.