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The Renesas Electronics Corporation 6116SA45DB is a static random access memory (SRAM) device with a storage capacity of 16 kbit, organized as 2k x 8. It features an asynchronous parallel interface and a typical access time of 45 ns. The component operates within a supply voltage range of 4.5 V to 5.5 V and has a maximum power current of 90 mA. Designed for through-hole installation, it is housed in a CDIP-24 package. The device supports an extended operating temperature range from -55°C to +125°C.
Verify component authenticity due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current standards. Validate pin compatibility and electrical specifications against existing designs before integration. Check for authorized distributors offering remaining stock or qualified replacement alternatives.
Select this component for applications necessitating through-hole packaging and high-temperature resilience. Ensure system design accommodates the 4.5 V to 5.5 V supply voltage range. Consider the 45 ns access speed when evaluating timing constraints. Verify that the CDIP-24 footprint aligns with the target PCB layout and assembly processes.
The 6116SA45DB belongs to the 6116SA45 series of asynchronous SRAMs manufactured by Renesas Electronics. This series provides non-volatile-like performance with volatile memory characteristics. The specific model targets robust industrial environments, distinguishing itself through its extended temperature rating and durable ceramic dual in-line package construction.
IDT6116SA45DB