6116SA45DB

Overview

The IDT6116SA45DB is a standard static random-access memory (SRAM) device manufactured by Renesas Electronics, the successor to Integrated Device Technology. It features a 16 kbit memory organization of 2K x 8 bits with an asynchronous interface and a maximum access time of 45 ns. The component operates within a supply voltage range of 4.5 V to 5.5 V and supports a maximum power consumption of 90 mA. It is designed for through-hole mounting in a leaded package and functions reliably across an extended industrial temperature range from -55 °C to +125 °C.

Feature Summary

• Asynchronous parallel interface for standard SRAM data access
• Extended operating temperature range suitable for harsh environments
• Through-hole packaging configuration for board integration

Applications

• Industrial control systems requiring high-temperature reliability
• Military-grade electronic equipment
• Embedded storage applications in legacy hardware

Procurement Notes

Verify that the manufacturer listing indicates Renesas Electronics, as IDT was acquired. Confirm the specific package type matches the required through-hole footprint. Check RoHS compliance status, as older batches may not meet current environmental standards. Ensure the 45 ns speed grade aligns with system timing requirements. Validate availability, as this part may be classified as obsolete or limited stock.

Selection Notes

Select this component when a 2Kx8 asynchronous SRAM with 45 ns access time is required for through-hole assembly. Ensure the design accommodates the 4.5 V to 5.5 V supply voltage range. Consider the extended temperature rating if the application environment exceeds standard commercial limits. Verify pin compatibility with existing PCB layouts before procurement.

Part Context

This device belongs to the 6116 series of standard SRAMs originally developed by IDT. Following the acquisition of IDT by Renesas Electronics, production and documentation are managed under the Renesas brand. The 6116SA45DB represents a specific speed grade and package variant within this established memory family.

Replacement Considerations

Cross-reference with other 2Kx8 asynchronous SRAMs offering 45 ns access times and through-hole packages. Verify pinout compatibility and electrical specifications against potential substitutes from manufacturers such as Cypress or Micron.