6116SA45TDB

Overview

The IDT6116SA45TDB is a 16K-bit (2K x 8) asynchronous static RAM manufactured by Renesas Electronics Corporation. It operates within a voltage range of 4.5V to 5.5V and features a 45 ns access time. The device utilizes a parallel interface and is housed in a 24-CDIP package designed for through-hole mounting. It supports an operating temperature range from -55°C to +125°C, classifying it as a military-grade component. The memory type is volatile SRAM.

Feature Summary

• Military-grade operational capability with extended temperature tolerance
• Reduced power standby mode for energy efficiency
• Fully static asynchronous architecture requiring no clocks or refreshing

Applications

• Industrial AC servo systems
• High-speed industrial controllers
• Embedded data storage in harsh environments

Procurement Notes

This component is officially listed as discontinued by the manufacturer. Verification of current availability requires checking authorized distributors for remaining stock or obsolete inventory. Ensure compatibility with existing PCB footprints and voltage levels before sourcing alternatives. Confirm RoHS status and specific revision details via official datasheets prior to procurement.

Selection Notes

Select this part for applications requiring high reliability in extreme temperatures. The CDIP package suits through-hole assembly needs. Verify that the 4.5V to 5.5V supply range matches system requirements. Consider the 45 ns speed for non-critical timing interfaces. Evaluate alternative military-grade SRAMs if new designs are initiated.

Part Context

The 6116SA series represents a high-speed CMOS SRAM line from Renesas. The SA suffix denotes standard performance variants, while the TDB indicates the specific 45 ns speed grade and ceramic DIP packaging. This family is known for TTL-compatible inputs and outputs, supporting robust integration in legacy and industrial digital systems.

Replacement Considerations

Public confirmed substitute part numbers: IDT6116SA45DB.