6116SA55DB

Overview

The Renesas Electronics Corporation 6116SA55DB is a 16K-bit (2K x 8) asynchronous static RAM IC. It operates with a 5V supply voltage and features a 55 ns access time. The device utilizes parallel interface technology for data transfer. It is housed in a 24-lead CDIP package designed for through-hole mounting. The component supports standard TTL-compatible inputs and outputs, ensuring compatibility with various logic families.

Feature Summary

• Asynchronous operation requiring no external clocks or refreshing cycles
• Reduced power standby mode for energy efficiency
• TTL-compatible input and output structures

Applications

• General-purpose memory storage in embedded systems
• Data buffering in industrial control applications
• Cache memory in microcontroller-based designs

Procurement Notes

Verify the specific package type and lead configuration against the target PCB footprint, as the 6116SA series includes both SOIC and CDIP variants. Confirm that the 55 ns speed grade meets the system timing requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure the supplier provides valid traceability documentation for this legacy component.

Selection Notes

Select this part when a 16K-bit capacity with 55 ns access time is required in a through-hole package. Compare against faster variants like the 15 ns or 20 ns models if higher performance is needed. Consider the LA version if battery backup retention is necessary. Verify that the 5V operating voltage aligns with the system power rails before integration.

Part Context

The 6116SA series represents a high-speed CMOS SRAM family organized as 2K by 8 bits. This specific model belongs to the SA line, which typically covers commercial temperature ranges. It serves as a non-volatile-like storage solution for volatile memory needs without the complexity of dynamic RAM refresh circuits.

Replacement Considerations

IDT6116SA55SO8

FAQ

Is the 6116SA55DB a volatile memory device?

Yes, it is an asynchronous static RAM that loses stored data when power is removed.

What is the organization of the memory array?

The internal memory is organized as 2K words by 8 bits per word.