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Product Detailed Parameters
- Description：IC SRAM 16KBIT PARALLEL 24CDIP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：16Kbit
- Memory Organization：2K x 8
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-55°C ~ 125°C (TA)
- Mounting Type：Through Hole
- Package / Case：24-CDIP (0.600", 15.24mm)
- Supplier Device Package：24-CDIP
- Access Time：55 ns
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Overview
The Renesas Electronics Corporation 6116SA55TDB is a 16Kb (2K x 8) asynchronous static random-access memory (SRAM). It operates with a core voltage of 5V and supports an I/O voltage range of 4.5V to 5.5V. The device features a maximum access time of 55ns. It is designed for through-hole mounting in a 24-pin CDIP package. The operational temperature range extends from -55°C to +125°C, supporting high-temperature industrial or military applications.
Feature Summary
- Fully static asynchronous circuitry requiring no clocks or refreshing for operation
- Reduced power standby mode capability
- TTL-compatible inputs and outputs
Applications
- Industrial control systems operating in high-temperature environments
- Military-grade electronic equipment requiring extended thermal stability
- Embedded memory storage in asynchronous data processing circuits
Procurement Notes
Verify the specific suffix TDB against official Renesas documentation to confirm the 24-pin CDIP package and lead configuration. Confirm RoHS compliance status as older variants may differ. Check current production lifecycle status, as this component series has faced discontinuation notices for related packages. Ensure design-in compatibility with existing PCB footprints for ceramic dual in-line packages.
Selection Notes
Select this part when a 5V asynchronous SRAM with 2Kx8 organization is required for harsh environment applications. The 55ns access speed suits moderate-speed data buffering needs. Compare against other SA-series variants based on required access times and package types. Verify that the through-hole CDIP form factor aligns with mechanical constraints and assembly processes.
Part Context
This component belongs to the 6116SA family of low-power, high-speed asynchronous SRAMs. The family typically offers various access time grades and package options to support diverse embedded memory requirements. These devices are characterized by their fully static operation and TTL compatibility, making them suitable for legacy and modern microprocessor interfaces.
Replacement Considerations
Publicly confirmed substitute part numbers for the 6116SA55TDB were not found in the provided source material. Consult official Renesas obsolescence notices or distributor cross-reference tools for verified alternatives.
