6116SA90DB

Overview

The Renesas Electronics Corporation 6116SA90DB is a 16 kbit asynchronous static random access memory organized as 2K x 8. It features a parallel interface with a maximum access time of 90 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and has a maximum power current of 90 mA. It supports an extended operating temperature range from -55°C to +125°C. The component utilizes a CDIP-24 through-hole package.

Feature Summary

• Asynchronous SRAM architecture requiring no clocks or refreshing for operation
• Reduced power standby mode capability
• TTL-compatible inputs and outputs

Applications

• Industrial control systems
• Military grade electronic equipment
• High-speed data buffering

Procurement Notes

Verify the obsolete status and end-of-life notification details before design finalization. Confirm RoHS compliance requirements, as the source indicates non-compliance. Ensure the CDIP-24 through-hole package matches the target PCB footprint. Validate that the 90 ns access time meets system timing constraints. Check for available alternative sources due to discontinuation.

Selection Notes

Select this component when a high-temperature industrial rating (-55°C to +125°C) is required alongside a through-hole package. The 90 ns speed suits moderate-speed asynchronous applications. Consider the 90 mA active current consumption against power budgets. Verify compatibility with TTL logic levels for interfacing. Evaluate the 2K x 8 organization against memory map requirements.

Part Context

This part belongs to the 6116SA series of 5V CMOS SRAMs. It shares the 2K x 8 density with other variants like the 6116SA70DB and 6116SA15TPG but differs in access speed and package type. The 'DB' suffix denotes the CDIP-24 ceramic dual in-line package. It is distinct from surface-mount SOIC versions such as the IDT6116SA20SO8.

Replacement Considerations

Public confirmed substitute part numbers: IDT6116SA90DB.