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The IDT6116SA90TDB is a standard static random-access memory (SRAM) device manufactured by Renesas Electronics, formerly IDT. It features a storage organization of 2K x 8 bits, providing a total capacity of 16 kbit. The component operates with an asynchronous interface and has a maximum access time of 90 ns. It supports a supply voltage range from 4.5 V to 5.5 V and draws a maximum power supply current of 90 mA. The device is housed in a CDIP-24 package designed for through-hole mounting. It functions within an industrial temperature range of -55 °C to +125 °C.
Verify the manufacturer designation carefully, as this part number is associated with Renesas Electronics following corporate acquisitions. Confirm RoHS compliance status, as sources indicate conflicting information regarding lead content and environmental certification. Ensure the CDIP-24 ceramic package specification matches the target PCB footprint requirements before procurement.
Select this component when a 2Kx8 SRAM with 90 ns access speed is required for through-hole assembly. Consider the CDIP-24 package constraints compared to surface-mount alternatives like LCC or DIP variants. Evaluate the 90 mA active current draw against system power budgets. Verify compatibility with 5V logic levels and ensure the operating temperature range meets the specific application environment demands.
This component belongs to the 6116SA series of standard SRAMs. Variants in this family differ primarily in access speed (e.g., 35ns, 55ns) and package type (e.g., DIP, LCC). The SA suffix typically denotes specific performance or packaging characteristics within the IDT/Renesas memory portfolio. This specific TDB suffix indicates the ceramic DIP-24 package configuration.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 6116SA series parts such as IDT6116SA35TDB for faster access times, ensuring package and electrical parameter compatibility.