Transistor, Photovoltaic Output Optoisolators 6N136F product image

6N136F

  • Description:OPTOISO 2.5KV TRANS W/BASE 8-DIP
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:6ef4f044f83b Category: Brand:

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6N136F is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISO 2.5KV TRANS W/BASE 8-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for 6N136F

  • Description:OPTOISO 2.5KV TRANS W/BASE 8-DIP
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:2500Vrms
  • Current Transfer Ratio (Min):19% @ 16mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):200ns, 500ns
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Transistor with Base
  • Voltage - Output (Max):15V
  • Current - Output / Channel:8mA
  • Voltage - Forward (Vf) (Typ):1.65V
  • Current - DC Forward (If) (Max):25 mA
  • Vce Saturation (Max):-
  • Operating Temperature:-55°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-DIP

Transistor, Photovoltaic Output Optoisolators datasheet and documents for 6N136F

6N136F

Transistor, Photovoltaic Output Optoisolators Overview

The Toshiba 6N136F is a high-speed optoisolator featuring an infrared emitting diode coupled with a photo-transistor output that includes a base terminal. It provides electrical isolation of 2500Vrms between input and output circuits. The device operates within a supply voltage range up to 15V and supports an output current of 8mA per channel. Key timing characteristics include a typical turn-on time of 200ns and a turn-off time of 500ns. It is housed in an 8-DIP package with a pin spacing of 7.62mm.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Integrates an infrared LED with a monolithic photo-transistor for signal transmission
  • Provides galvanic isolation via a 2500Vrms dielectric barrier
  • Includes a base terminal on the output transistor for external control or speed adjustment
  • Designed for high-speed digital signal isolation applications

Transistor, Photovoltaic Output Optoisolators Applications

  • High-speed data communication interface isolation
  • Microprocessor system noise immunity enhancement
  • Industrial control signal isolation
  • Power supply feedback loop isolation

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify component status carefully as this part may be obsolete. Confirm availability through authorized distributors only. Check datasheet revisions for any parameter updates. Ensure compatibility with existing PCB footprints. Validate supplier authenticity to avoid counterfeit components.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Consider the 8mA output current limit when designing load circuits. Evaluate the 200ns/500ns switching speeds against system timing requirements. Verify that the 2500Vrms isolation rating meets safety standards. Assess thermal performance within the 8-DIP package constraints.

Transistor, Photovoltaic Output Optoisolators Part Context

This component belongs to Toshiba's 6N13x series of high-speed optoisolators. It shares architectural similarities with the 6N135 but offers specific timing and output characteristics tailored for faster digital isolation needs. The series is designed for robust performance in noisy environments.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

Check for direct pin-compatible substitutes from Toshiba or other manufacturers. Verify that replacement parts match the 2500Vrms isolation and 8mA output current specifications. Ensure timing parameters meet or exceed the original 200ns/500ns requirements.

6N136F6N136F

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