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The Renesas Electronics Corporation 7005L35JG is a high-speed, asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 64 kilobits organized as 8K words by 8 bits. The device features independent read/write ports with a maximum access time of 35 nanoseconds. It operates on a single 5V power supply within a voltage range of 4.5V to 5.5V and supports through-hole installation in a 68-pin PGA package.
Verify component authenticity against official Renesas documentation. Confirm package integrity and pin alignment for the 68-PGA form factor. Ensure compatibility with 5V logic levels and check for RoHS compliance status if required by specific manufacturing standards. Validate lead times and availability directly with authorized distributors.
Select this component when simultaneous bidirectional data access is required without external multiplexing. Suitable for applications needing hardware-based arbitration and semaphore signaling. Verify that the 35ns access speed meets system timing requirements. Ensure the design accommodates the 68-pin PGA footprint and through-hole assembly process.
This part belongs to the 7005 series of high-speed dual-port SRAMs. It shares architectural similarities with other variants like the 7005S35J but differs in package type and mounting style. The series is designed for flexible integration into parallel interface systems requiring high-speed concurrent memory operations.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer documentation for potential upgrades or cross-references.