SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Renesas Electronics Corporation 7005L55PFI8 is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 64 kilobits, organized as 8K words by 8 bits. The device features asynchronous parallel interface technology with a maximum access time of 55 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 64-pin Thin Quad Flat Package (TQFP) measuring 14x14 millimeters. The component is designed for commercial temperature applications ranging from 0°C to 70°C.
Verify the exact suffix configuration against official Renesas documentation before procurement. Confirm that the specific package variant matches the required footprint and pinout specifications. Ensure compliance with applicable environmental regulations relevant to the target deployment region. Validate compatibility with existing system voltage rails and signal integrity requirements.
Select this component when a dual-port SRAM solution is required for asynchronous data handling. Consider the 64-kilobit capacity and 55-nanosecond speed characteristics for moderate-performance applications. Evaluate the 64-TQFP package dimensions against available board space constraints. Verify that the commercial temperature range meets the operational environment requirements.
This part belongs to the Renesas 7005L series of dual-port SRAM devices. The series offers various speed grades and packaging options to suit different design needs. The 7005L55PFI8 specifically targets applications requiring reliable volatile memory with independent port access capabilities.
Consult official Renesas engineering change notices or product discontinuation notices for confirmed substitute part numbers. Do not assume functional equivalence with other series members without verifying electrical parameters and pin configurations.