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The Renesas 7006L20FB is a dual-port static random-access memory (SRAM) with a storage capacity of 128 kbit, organized as 16k x 8. It features a parallel interface and an access time of 20 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V, with a maximum power consumption of 320 mA. It supports surface-mount installation in a 68-FPACK package and functions reliably across a temperature range of -55°C to +125°C.
Verify the specific suffix 'FB' against official Renesas documentation to confirm the 68-FlatPack package and military-grade temperature rating. Ensure compatibility with 5V logic levels and check for RoHS compliance status in the latest datasheet revision before finalizing procurement specifications.
Select this component when dual-port functionality is required for shared memory access between multiple masters. The 20 ns speed and 128 kbit capacity suit moderate-density buffering needs. Consider the 68-FPACK footprint and -55°C to +125°C operating range for industrial or aerospace environments where standard commercial parts are insufficient.
This part belongs to the 7006L series of asynchronous dual-port SRAMs from Renesas. It provides non-volatile-like performance with volatile storage, allowing full independence of port operations. The series is designed for high-reliability applications, distinguishing it from single-port alternatives through its dedicated address and data buses for each port.
Publicly confirmed substitutes include IDT7006L20JGI and 70V06L20PFGI. Verify pinout compatibility and voltage level alignment, as some variants operate at 3.3V while others require 5V. Package differences such as PLCC or TQFP may necessitate adapter solutions or PCB redesign.
It allows two independent processors to access the same memory simultaneously without contention, improving system throughput.
When the chip enable (CE) signal is deactivated, the on-chip circuitry enters a very low standby power mode automatically.