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The Renesas Electronics Corporation 7006L35J is a high-speed, asynchronous dual-port static random access memory (SRAM) with a total storage capacity of 128 Kbit. The memory organization is structured as 16K words by 8 bits. It features a parallel interface and supports simultaneous independent access from two ports. The device operates within a supply voltage range of 4.5 V to 5.5 V and provides an access time of 35 ns. It is designed for surface mount installation in a 68-pin PLCC package.
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as indicated in official documentation. Check for moisture sensitivity level requirements during handling and storage. Ensure packaging integrity matches specified tube quantities. Validate lead markings against manufacturer datasheets for accurate identification.
Select this component when simultaneous bidirectional data access is required for high-speed processing tasks. Consider the 68-pin PLCC package constraints for PCB layout design. Evaluate power consumption profiles against system thermal limits. Verify compatibility with existing TTL-compatible logic levels operating at 5V. Assess whether the 35 ns access time meets real-time processing deadlines.
This part belongs to the Renesas 7006 series of dual-port SRAMs, which are widely used in telecommunications and industrial control applications. The series offers various speed grades and package options to accommodate different system performance requirements. The 7006L35J specifically targets applications needing moderate speed with robust port arbitration features.
IDT7006L35J serves as a direct functional substitute with identical specifications and pinout compatibility. Cross-reference electrical parameters and package dimensions before implementation to ensure seamless integration into existing designs.