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The Renesas Electronics Corporation 7006L35PF is a high-speed, asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kilobits organized as 16K words by 8 bits. The device features parallel interface access with a maximum access time of 35 nanoseconds. It operates on a single 4.5V to 5.5V power supply and supports surface-mount installation in a 64-pin Thin Quad Flatpack package measuring 14x14 millimeters. The component is designed for industrial temperature ranges.
Verify the specific suffix designation against official Renesas documentation to confirm exact package dimensions and temperature grade. Confirm RoHS compliance status as older variants may differ. Check for active production status or obsolescence notices before finalizing procurement plans. Ensure ESD handling protocols are followed during assembly due to moisture sensitivity classification.
Select this component when a system requires true dual-port capability with independent address and data buses for two distinct masters. Compare access times against system clock requirements to ensure the 35ns speed meets timing constraints. Evaluate power consumption profiles if battery backup operation is required, noting the low standby mode capabilities. Verify that the 64-pin TQFP package fits within the available PCB real estate constraints.
The 7006 series represents a family of high-speed dual-port SRAMs designed for applications needing concurrent access. This specific model utilizes advanced CMOS technology to deliver performance while maintaining compatibility with standard 5V logic levels. It serves as a critical interconnect solution in complex digital architectures where data sharing between multiple processors must occur without software overhead or bus contention.
Official upgrade alternatives include the 7005L15PFG. Verify pinout compatibility and electrical specifications before substitution. Cross-reference datasheets to ensure functional equivalence in semaphore and interrupt handling mechanisms.