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The Renesas Electronics Corporation 7006L35PFI is a dual-port, asynchronous Static Random Access Memory (SRAM) integrated circuit. It provides a storage capacity of 128 Kbit organized as 16K x 8 bits. The device features a parallel interface with a maximum access time of 35 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 64-TQFP package measuring 14x14 mm. The component is classified as an asynchronous memory IC designed for high-performance data buffering applications.
Verify the specific suffix 'I' against official Renesas documentation to confirm temperature range and RoHS compliance status. Confirm package dimensions match the 64-TQFP specification. Check current production status as legacy parts may have limited availability or obsolescence notices. Ensure moisture sensitivity level requirements are met for your assembly process.
Select this component when a dual-port asynchronous SRAM with 128 Kbit capacity is required. Compare access times and power consumption against single-port alternatives if only one master is used. Verify voltage compatibility with the 4.5 V to 5.5 V operating range. Consider pin count and package size constraints relative to the 64-TQFP form factor.
This part belongs to the Renesas 7005L/7006L series of dual-port SRAMs. These devices are designed for applications requiring shared memory access between two processors or logic blocks. The series offers various capacities and speeds, with the 7006L35PFI providing a balance of density and speed for mid-range performance needs.
Official substitutes include the 7005L35PFG. Verify pinout compatibility and electrical specifications before substitution. Cross-reference with IDT equivalents if sourcing from different distributors.