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The Renesas Electronics Corporation 7006L55PF is a high-speed, asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kilobits, organized as 16K words by 8 bits. The device features a parallel interface with a maximum access time of 55 nanoseconds. It operates on a single 4.5V to 5.5V power supply and supports surface-mount installation in a 64-pin Thin Quad Flatpack (TQFP) package measuring 14x14 mm. The component functions within an ambient temperature range of 0°C to 70°C.
Verify the specific suffix 'PF' against the manufacturer's official datasheet to confirm the package type and temperature grade. Ensure compatibility with existing PCB footprints for the 64-TQFP form factor. Check for RoHS compliance status if required by local regulations, as older variants may differ. Confirm lead times and availability through authorized distributors, as this component may be subject to end-of-life notices.
Select this component when a system requires true dual-port capability for concurrent access by two distinct controllers. The 55 ns speed is suitable for moderate-frequency applications where lower-cost alternatives suffice. Consider the 64-pin TQFP package constraints for board space. Evaluate power requirements against the specified 4.5V to 5.5V operating range and standby current specifications.
The 7006L series belongs to Renesas' family of high-speed dual-port SRAMs, originally developed under IDT branding. These devices are designed for applications requiring fast, non-blocking data exchange between two independent buses. The 7006L55PF specifically denotes the 55 ns speed grade within the 128Kb density class, utilizing standard TTL-compatible logic levels for ease of integration into legacy and modern digital designs.
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material. Verify cross-references with other manufacturers offering equivalent 128Kb dual-port SRAMs only after confirming pinout and electrical parameter compatibility.