7006S12G

Overview

The Renesas Electronics Corporation 7006S12G is a high-speed, asynchronous dual-port static random-access memory (SRAM) IC. It provides a storage capacity of 128K bits organized as 16K words by 8 bits. The device features a parallel interface with an access time of 12 nanoseconds. It operates on a single 5V power supply within a voltage range of 4.5V to 5.5V. The component is housed in a 68-pin PGA package measuring 29.46mm by 29.46mm. Designed for industrial applications, it supports a temperature range from -40°C to +85°C.

Feature Summary

• True dual-ported memory architecture enabling simultaneous independent reads and writes to the same memory location without conflict.
• Integrated hardware support for semaphore signaling and port arbitration logic to manage data integrity between ports.
• Automatic power-down feature controlled by chip enable signals to achieve very low standby power consumption modes.
• TTL-compatible operation allowing direct interfacing with standard digital logic systems using a single 5V supply.

Applications

• High-speed data buffering in communication systems requiring concurrent host and peripheral access.
• Master/slave dual-port configurations for expanding data bus widths to 16 bits or more in embedded systems.
• Industrial control units requiring reliable volatile memory with interrupt flag capabilities for real-time processing.

Procurement Notes

Verify the specific suffix G indicates the correct package variant and lead finish before ordering. Confirm RoHS compliance status and environmental declarations against current manufacturer documentation. Check for obsolescence notices or last-time buy dates as this component family may have limited availability. Ensure the supplier provides valid traceability documents for industrial-grade components.

Selection Notes

Select this part when simultaneous bidirectional data transfer is required without external arbitration circuitry. Choose the 12ns speed grade for applications demanding faster cycle times than the 20ns variants. Consider the PGA package only if through-hole mounting is necessary for mechanical stability. Evaluate power consumption requirements as the automatic power-down feature helps minimize active and standby currents.

Part Context

The 7006 series represents a family of high-speed dual-port SRAMs designed for versatile memory management tasks. This specific model belongs to the asynchronous subset, offering flexible timing control for both ports. The 7006S12G variant specifically targets applications needing rapid data throughput with robust hardware-based conflict resolution mechanisms built into the silicon design.

Replacement Considerations

• IDT7006S12G

FAQ

Can the 7006S12G operate with battery backup?

Yes, the device supports battery backup operation with 2V data retention capabilities to preserve stored information during main power loss.

How does the device handle simultaneous access conflicts?

It utilizes full on-chip hardware support for semaphore signaling and port arbitration logic to manage access rights between the two ports automatically.