7006S17JI8

Overview

The Renesas Electronics Corporation 7006S17JI8 is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kbit, organized as 16k words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 17 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 68-pin PLCC package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access to the same memory array from two separate ports.

Applications

• High-speed data buffering in communication systems
• Cache memory for microprocessors requiring fast read/write cycles
• FPGA configuration memory blocks

Procurement Notes

Verify component authenticity through authorized Renesas distributors or direct sales offices. Confirm current lifecycle status as the part may be obsolete. Ensure RoHS compliance requirements are met if applicable to your manufacturing standards. Request official datasheets and quality certificates before finalizing procurement decisions.

Selection Notes

Select this component when dual-port functionality is required for concurrent data handling. Compare access times against system timing constraints. Evaluate package compatibility with existing PCB layouts. Consider power consumption limits relative to available thermal management solutions.

Part Context

This SRAM belongs to the 7006S series, designed for applications needing high-speed asynchronous memory. It serves as a legacy alternative to newer synchronous memories in specific industrial or embedded contexts where dual-port independence is critical.

Replacement Considerations

Check for compatible dual-port SRAMs with similar 17 ns access times and 68-PLCC packaging. Verify pinout compatibility to avoid redesigning the host board. Confirm electrical specifications match the original design requirements.