7006S20J

Overview

The Renesas Electronics Corporation 7006S20J is a high-speed, asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kilobits organized as 16K words by 8 bits. The device features a parallel interface with a maximum access time of 20 nanoseconds. It operates on a single 5V power supply within a voltage range of 4.5V to 5.5V. The component is housed in a 68-pin Plastic Leadless Chip Carrier (PLCC) package with J-leads, measuring 24.21mm by 24.21mm. It supports surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Feature Summary

• True dual-ported memory architecture enabling simultaneous independent reads from the same memory location by both ports.
• On-chip hardware support for semaphore signaling and port arbitration logic to manage data integrity between ports.
• Automatic power-down feature controlled by chip enable signals to minimize standby power consumption.
• TTL-compatible inputs and outputs allowing direct interfacing with standard digital logic systems.

Applications

• Stand-alone 128K-bit dual-port RAM modules
• Master/Slave dual-port configurations for 16-bit or wider word systems
• Battery-backed memory systems requiring 2V data retention

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as this specific variant may not meet current environmental directives. Validate package integrity upon receipt, ensuring no lead damage occurred during handling. Check datasheet revisions for any pinout or electrical characteristic updates prior to final design integration.

Selection Notes

Select this component when true dual-port simultaneous access is required without external arbitration logic. Suitable for applications needing fast parallel data exchange between two processors. Consider the PLCC-68 footprint constraints and commercial temperature range limits. Evaluate power consumption profiles against system battery backup capabilities if low standby mode is critical.

Part Context

This part belongs to the IDT 7006 series of high-speed dual-port SRAMs originally developed by Integrated Device Technology and later acquired by Renesas. The series is designed for high-performance data buffering and protocol conversion tasks. The 7006S20J specifically denotes the 20ns speed grade within the S-series commercial temperature variants.

Replacement Considerations

• IDT7006S20J