7006S25J8

Overview

The Renesas Electronics Corporation 7006S25J8 is a dual-port static random access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kbit, organized as 16k words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 25 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface mount installation in a 68-PLCC package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate systems or processors.

Applications

• High-speed data buffering between asynchronous logic blocks.

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements against project specifications, as the source indicates non-compliance. Validate package integrity upon receipt to ensure pin alignment matches the 68-PLCC footprint. Review datasheet for humidity sensitivity handling procedures prior to assembly.

Selection Notes

Select this component when dual independent port access is required for 128 kbit memory configurations. Ensure system power supplies maintain the 4.5 V to 5.5 V operating range. Verify that the 25 ns access speed meets timing constraints. Confirm compatibility with the 68-PLCC surface mount form factor during PCB layout design.

Part Context

This part belongs to the Renesas 7006S series of dual-port SRAMs. It serves as a high-performance memory solution for applications requiring concurrent read/write operations from multiple masters without bus contention. The series is characterized by fast asynchronous access times and standard parallel interfaces.

Replacement Considerations

Check for direct cross-reference part numbers from Renesas or IDT with identical pinouts and electrical characteristics. Verify that any substitute maintains the 16k x 8 organization and 68-PLCC package. Confirm functional equivalence for dual-port operation before implementation.