7006S25PF8

Overview

The Renesas Electronics Corporation 7006S25PF8 is a dual-port static random access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kilobits, organized as 16K words by 8 bits. The device utilizes an asynchronous parallel interface with a specified access time of 25 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 64-pin Thin Quad Flat Package measuring 14x14 millimeters.

Feature Summary

• Supports simultaneous independent read and write operations at two distinct ports for concurrent data handling.

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data logging in industrial control units

Procurement Notes

Verify the specific suffix PF8 against official Renesas documentation to confirm package dimensions and pin configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the manufacturing process.

Selection Notes

Select this component when a 128Kb dual-port SRAM with 25ns access speed is required. Ensure the design accommodates the 4.5V to 5.5V operating voltage range and the 64-TQFP physical footprint constraints.

Part Context

This part belongs to the Renesas 7006 series of high-performance dual-port SRAMs. These devices are designed for applications requiring fast, non-blocking data exchange between two masters or processors without external arbitration logic.

Replacement Considerations

Consult official Renesas cross-reference guides for verified substitutes. Generic equivalents may differ in electrical characteristics or pinout compatibility.