SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Renesas Electronics Corporation 7006S35G is a high-speed 128K-bit (16K x 8) Dual-Port Static RAM. It features true dual-ported memory cells allowing simultaneous reads of the same location, with fully asynchronous operation from either port. The device supports on-chip port arbitration logic and semaphore signaling for master/slave configurations. It operates on a single 5V supply with TTL-compatible I/O and includes an automatic power-down feature controlled by Chip Enable to minimize standby power.
Verify the specific suffix G against official Renesas documentation to confirm package type, temperature range, and RoHS compliance status. Confirm current production status as legacy components may have limited availability or end-of-life notifications. Ensure the selected variant matches the required pinout and electrical specifications for the target application design.
Select this component when simultaneous independent access to shared memory is required without external arbitration logic. The 7006S35G is suitable for applications needing fast asynchronous data transfer between two processors or controllers. Consider the 64-pin TQFP package constraints and thermal requirements. Verify that the 5V supply tolerance and TTL compatibility align with the system's voltage levels.
The 7006 series represents a family of high-speed dual-port SRAMs designed for complex data sharing applications. The 7006S35G specifically offers a 16K x 8 organization in a compact surface-mount package. This part bridges the gap between simple single-port memories and complex multi-port solutions, providing dedicated hardware for inter-port synchronization and status indication.
Check for direct pin-to-pin replacements within the 7006 series with different speed grades or packages. Verify functional equivalence if substituting with other dual-port SRAMs, ensuring compatible arbitration logic and signal timing characteristics.