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The 7006S35PF is a dual-port asynchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a storage capacity of 128 kilobits, organized as 16K words by 8 bits. The device features parallel interface access with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports an ambient operating temperature range from 0°C to 70°C. The component is housed in a 64-lead Thin Quad Flat Package (TQFP) measuring 14mm by 14mm.
Verify the specific package variant and suffix codes against official Renesas documentation to ensure compatibility with existing board layouts. Confirm that the RoHS status and moisture sensitivity level meet current regulatory requirements for your manufacturing region. Check for any product discontinuation notices or end-of-life notifications prior to finalizing procurement plans.
Select this component when a design requires independent dual-port access to shared memory resources without external bus contention management. Ensure the system power supply remains stable within the 4.5V to 5.5V range to maintain signal integrity. Verify that the 35ns access speed aligns with the processor or controller clock cycles in the target application architecture.
This part belongs to the Renesas 7006S series of dual-port SRAM devices. These components are designed to facilitate efficient data exchange between different processing units or subsystems. The series offers various density and speed options to suit diverse embedded memory requirements across multiple industry sectors.
Consult official Renesas documentation for verified upgrade paths or pin-compatible alternatives if this component becomes unavailable. Cross-reference technical specifications such as access time, organization, and package dimensions to ensure functional equivalence in existing designs.