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The Renesas Electronics Corporation 7006S55J is a dual-port asynchronous static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kilobits, organized as 16K words by 8 bits. The device features parallel interface access with a maximum access time of 55 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 68-pin PLCC package measuring 24.21mm by 24.21mm. The component is designed for commercial temperature ranges from 0°C to 70°C.
Verify the specific suffix designation against official Renesas documentation to confirm package type and environmental rating. Confirm current production status as legacy components may have limited availability or require obsolescence management strategies. Ensure compatibility with existing board layouts regarding pin assignments and thermal requirements.
Select this component when dual-port functionality is required for concurrent read/write operations between two distinct masters. Compare access times and power consumption against alternative SRAM families if higher speed or lower voltage operation is needed. Verify that the 68-PLCC package fits the available footprint and assembly capabilities.
This part belongs to the Renesas 7006 series of dual-port SRAMs. The series offers various access speeds and organization options to suit different performance requirements. The 7006S55J specifically targets applications needing moderate speed with dual-port independence in a compact leaded plastic package.
Check for direct cross-reference part numbers such as IDT7006S55J. Verify electrical parameters and pinout compatibility before substitution. Consider newer generations from Renesas or other manufacturers if long-term supply assurance is critical.