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The Renesas Electronics Corporation 7006S55PF is a dual-port, asynchronous static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 128 kilobits, organized as 16K words by 8 bits. The device features a parallel interface with a maximum access time of 55 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 64-pin Thin Quad Flat Package measuring 14x14 millimeters. The component is designed for commercial temperature operation between 0°C and 70°C.
Verify the specific package variant and manufacturer documentation before integration. Confirm that the 64-TQFP footprint matches the target PCB design. Ensure the operating environment remains within the specified commercial temperature limits. Check for any RoHS compliance status updates from the manufacturer. Validate pin compatibility if replacing legacy components in existing designs.
Select this component when a system requires independent dual-port access for concurrent data handling. Choose this part for applications demanding 55-nanosecond response times with standard 5-volt logic levels. Consider this option for designs utilizing parallel bus architectures rather than serial alternatives. Evaluate the 128-kilobit capacity against total buffer requirements to ensure sufficient memory space.
This device belongs to the 7006 series of dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and organization options to suit different processing speeds. The 7006S55PF specifically targets commercial-grade applications requiring moderate speed and standard voltage operation. It serves as a bridge between high-speed processors and slower peripheral devices.
Public confirmed substitute part numbers are not available in the provided source material.