7007S12J

Memory IC Overview

The Renesas Electronics Corporation 7007S12J is a dual-port asynchronous static random access memory (SRAM) integrated circuit. It features a storage capacity of 256 Kbit organized as 32K x 8 bits. The device supports parallel interface operations with an access time of 12 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and functions at temperatures between 0°C and +70°C. The component is housed in a 68-PLCC surface-mount package.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on two ports.

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data acquisition system temporary storage

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance requirements against specific project standards, as the part may not meet current environmental directives. Validate package integrity upon receipt, ensuring no physical damage to the 68-PLCC leads before integration into PCB assemblies.

Memory IC Selection Notes

Select this component for applications requiring independent dual-port access to shared memory resources without external arbitration logic. Ensure design compatibility with 5V logic levels and verify that the 12 ns speed meets system timing constraints. Consider the PLCC package footprint during layout planning and account for moisture sensitivity handling procedures during assembly.

Memory IC Part Context

This SRAM belongs to the 7007L/S series of dual-port memories from Renesas. It serves as a high-speed non-volatile-free storage solution for legacy and specialized industrial applications requiring parallel interface simplicity and independent port control for concurrent data processing tasks.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: IDT7007S12J.