7007S25G

Memory IC Overview

The Renesas 7007S25G is a dual-port static random-access memory (SRAM) device with a storage capacity of 256 kbit, organized as 32k x 8. It features an asynchronous parallel interface with a maximum access time of 25 ns. The component operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in an 80-TQFP package. It functions within a commercial temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports.

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory for microprocessors
• FIFO buffers in industrial control networks

Memory IC Procurement Notes

Verify the specific suffix 'G' against official Renesas documentation to confirm lead-free status and RoHS compliance, as datasheets may list variations. Confirm package availability and lifecycle status directly with authorized distributors, as this component may be subject to limited supply or end-of-life restrictions.

Memory IC Selection Notes

Select this part when a system requires independent dual-port access for concurrent data handling without external arbitration logic. Ensure the design accommodates the 4.5V to 5.5V power supply requirement and the 80-pin TQFP footprint constraints.

Memory IC Part Context

This SRAM belongs to the 7007L/S series of high-performance dual-port memories from Renesas. These devices are designed for applications requiring fast, reliable data transfer between two independent masters, such as network routers or embedded controllers needing shared memory access.

Memory IC Replacement Considerations

Check for direct pin-compatible replacements within the 7007 series, such as the 7007S25PF, ensuring identical timing and voltage specifications before substitution.