7007S25J8/C

Memory IC Overview

The Renesas Electronics Corporation 7007S25J8/C is a dual-port asynchronous static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 256 kilobits, organized as 32K words by 8 bits. The device features a parallel interface with a maximum access time of 25 nanoseconds and a write cycle time of 25 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 68-PLCC package.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access from two distinct processors or systems.

Memory IC Applications

• High-speed data buffering in telecommunications equipment.

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements against project specifications, as the base part may not meet current environmental standards. Validate pin compatibility for existing PCB footprints before procurement.

Memory IC Selection Notes

Select this component when dual-port functionality is required for 256K-bit applications. Ensure the design accommodates the 68-PLCC package dimensions and 4.5V to 5.5V power supply constraints. Consider lead times and availability given the discontinued manufacturing status.

Memory IC Part Context

This component belongs to the 7007S series of dual-port SRAMs from Renesas Electronics. It shares architectural similarities with other parts in the family but is distinguished by its specific 256K-bit capacity and 25ns speed grade. The 7007S series is designed for high-performance parallel memory applications requiring concurrent read/write operations.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: None identified in available documentation.