7007S55J

Memory IC Overview

The Renesas Electronics Corporation 7007S55J is a dual-port static random access memory (SRAM) device. It features a storage capacity of 256 kbit organized as 32k x 8 bits. The component utilizes an asynchronous parallel interface with a maximum access time of 55 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface mount installation in a 68-PLCC package.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations from two separate ports.

Memory IC Applications

• Data buffering in high-speed digital systems
• Cache memory implementation in embedded processors
• FIFO buffer applications requiring independent port access

Memory IC Procurement Notes

Verify the exact suffix designation for the specific package variant required, as the base part number may correspond to multiple packaging options such as PLCC or LCC. Confirm RoHS compliance status and moisture sensitivity levels prior to integration into production workflows.

Memory IC Selection Notes

Select this component when independent dual-port access is necessary for concurrent data handling. Ensure the system design accommodates the 4.5 V to 5.5 V operating voltage range and the physical dimensions of the 68-pin plastic leaded chip carrier package.

Memory IC Part Context

This device belongs to the Renesas 7007 series of asynchronous dual-port SRAMs. These components are designed for applications requiring high-speed data transfer between two independent masters without bus contention, commonly found in telecommunications and industrial control systems.

Memory IC Replacement Considerations

Cross-reference with IDT7007S55 variants for potential pin-compatible alternatives. Verify electrical specifications and package dimensions match before substitution.