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7007S55PFI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 256KBIT PARALLEL 80TQFP. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 7007S55PFI is a dual-port, asynchronous static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 256 kilobits, organized as 32K words by 8 bits. The device features a parallel interface with a maximum access time and write cycle time of 55 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports an industrial operating temperature range from -40°C to +85°C. The component is housed in a surface-mount 80-lead Thin Quad Flat Package (TQFP) measuring 14x14 mm.
Verify the specific suffix PFI against the manufacturer's current datasheet to confirm package dimensions and pinout compatibility. Check RoHS compliance status as older variants may not meet current environmental regulations. Confirm availability through authorized distributors, noting that this part number may be subject to discontinuation or lifecycle changes. Ensure the supply voltage matches the system requirements strictly within the 4.5V to 5.5V range to prevent damage.
Select this component when a design requires independent read/write ports for concurrent data handling without arbitration overhead. The 55 ns speed is suitable for moderate-frequency microcontrollers. Consider the 80-pin TQFP package constraints regarding board space and thermal dissipation. Compare against single-port alternatives if only one processor accesses the memory, as dual-port devices typically incur higher power consumption and cost.
This SRAM belongs to the Renesas 7007 series, designed for general-purpose dual-port memory applications. The series offers various capacities and speeds to suit different performance needs. The 7007S55 variant specifically targets applications requiring 256Kb capacity with 55 ns latency. It serves as a bridge between slower synchronous memories and faster but more complex synchronous DRAMs in legacy or cost-sensitive designs.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with IDT brand equivalents if applicable, ensuring electrical parameters and pinouts match exactly.
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