7008L12J8

Memory IC Overview

The Renesas Electronics Corporation 7008L12J8 is a dual-port, asynchronous static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 512 kilobits organized as 64K words by 8 bits. The device features a parallel interface with an access time and write cycle time of 12 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in an 84-pin PLCC package measuring 29.31x29.31 mm.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access from two distinct processors or systems.

Memory IC Applications

• High-speed data buffering in telecommunications equipment.

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements against specific project standards, noting that some variants may not meet current regulations. Validate package integrity upon receipt to ensure suitability for automated assembly processes.

Memory IC Selection Notes

Select this component when dual-port functionality is required for shared memory resources. Ensure the design accommodates the 84-PLCC footprint and 4.5V to 5.5V power supply constraints. Consider the 12ns speed grade for applications demanding rapid asynchronous data exchange between processing units.

Memory IC Part Context

This part belongs to the 7008L series of dual-port SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other members like the 7008L20J8 and 7008S35J8, differing primarily in access speed and temperature rating specifications within the same memory density class.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs if considering alternative vendors.