70121L55JG

Memory IC Overview

The 70121L55JG is a dual-port static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 18 kilobits, organized as 2K words by 9 bits. The device utilizes a parallel interface with an access time and write cycle time of 55 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 52-pin Plastic Leadless Chip Carrier (PLCC) package.

Memory IC Feature Summary

• Supports simultaneous independent read and write operations at both Port A and Port B for concurrent data processing.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in industrial control systems
• Data logging in embedded measurement devices

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to discontinuation status. Confirm RoHS3 compliance and moisture sensitivity level 3 handling requirements during assembly. Check for specific manufacturer lot codes or date codes if traceability is required for critical applications.

Memory IC Selection Notes

Select this component when dual-port functionality is required for 18-bit wide data paths. Ensure the design accommodates the 52-PLCC footprint and 5V logic levels. Consider thermal dissipation characteristics for the PLCC package in enclosed environments.

Memory IC Part Context

This part belongs to the 70121L series of asynchronous dual-port SRAMs from Renesas. It serves as a high-performance memory solution for applications requiring simultaneous access from two different masters without bus contention.

Memory IC Replacement Considerations

Consult official Renesas documentation for verified cross-reference parts. Verify pin compatibility and electrical specifications before substituting.