70121S35JG

Memory IC Overview

The Renesas 70121S35JG is an asynchronous dual-port static random-access memory (SRAM) IC with a storage capacity of 18 kbit, organized as 2K x 9. It features a parallel interface with a maximum access time of 35 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 52-PLCC package. It functions within a commercial temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access by two masters
• Asynchronous operation for flexible system integration
• Parallel interface supporting standard data bus widths

Memory IC Applications

• High-speed data buffering in embedded systems
• Cache memory implementation in microcontroller designs
• Data logging applications requiring rapid write cycles

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to discontinuation status. Confirm RoHS compliance and moisture sensitivity level handling requirements during assembly. Cross-reference datasheet revisions to ensure pinout compatibility with existing PCB layouts before finalizing procurement orders.

Memory IC Selection Notes

Select this component when 18 kbit dual-port SRAM is required with 35 ns latency. Ensure the design accommodates 5.5 V logic levels and PLCC-52 footprint constraints. Evaluate power consumption limits against the specified maximum current draw for thermal management purposes.

Memory IC Part Context

This part belongs to the 70121 series of dual-port SRAMs from Renesas. It shares architectural similarities with other members like the 70125L35J but differs in organization and voltage specifications. The series targets industrial and commercial applications needing reliable non-volatile-free data retention.

Memory IC Replacement Considerations

IDT70121S35JG serves as a direct equivalent under the Integrated Device Technology branding prior to acquisition.