7024L35JI8

Memory IC Overview

The Renesas Electronics Corporation 7024L35JI8 is a dual-port static random access memory (SRAM) integrated circuit. It provides a storage capacity of 64 kilobits, organized as 4K words by 16 bits. The device operates asynchronously with a maximum access time of 35 nanoseconds. It functions within a supply voltage range of 4.5 volts to 5.5 volts and supports parallel data interfaces for both read and write operations. The component is housed in an 84-pin Plastic Leadless Chip Carrier (PLCC) package designed for surface-mount installation.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous access from two distinct systems
• Asynchronous operation allowing flexible clocking without external synchronization requirements
• CMOS technology providing high-density storage with low power consumption characteristics

Memory IC Applications

• High-speed data buffering between asynchronous logic subsystems
• Cache memory implementation in embedded processing architectures
• Data acquisition systems requiring rapid temporary storage before transfer

Memory IC Procurement Notes

Verify the exact suffix configuration against official manufacturer documentation to confirm pinout compatibility and electrical specifications. Confirm RoHS compliance status and moisture sensitivity level prior to integration into production workflows. Ensure availability through authorized channels due to potential end-of-life restrictions associated with legacy semiconductor components.

Memory IC Selection Notes

Select this component when a design requires independent read/write ports for concurrent data handling without bus contention. The 35-nanosecond access speed suits applications demanding moderate throughput. Verify that the 84-lead PLCC footprint aligns with existing printed circuit board layouts and assembly capabilities.

Memory IC Part Context

This part belongs to the Renesas 7024 series of dual-port SRAM devices. These components are engineered for applications requiring high-performance memory interfacing. The series utilizes advanced CMOS processes to deliver reliable data retention and fast switching speeds within standard industrial voltage parameters.

Memory IC Replacement Considerations

Consult official substitution guides for compatible dual-port SRAM alternatives. Verify pin-to-pin compatibility and electrical parameter alignment before replacing the original component in established designs.