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7024S25PF8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 64KBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.
The 7024S25PF8 is a dual-port static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a storage capacity of 64 kilobits, organized as 4096 words by 16 bits. The device features asynchronous parallel interfaces with a maximum access time of 25 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports an ambient operating temperature from 0°C to 70°C. The component is housed in a 100-lead Thin Quad Flat Package measuring 14x14 millimeters.
Verify the specific suffix 'PF8' against official Renesas documentation to confirm package type and tape-and-reel configuration. Confirm RoHS compliance status as older variants may differ. Check for product discontinuation notices or end-of-life notifications prior to procurement. Ensure the selected variant matches the required lead frame material and moisture sensitivity level for the intended assembly process.
Select this component when a system requires non-blocking dual-port memory for high-throughput data exchange between processors. The 25-nanosecond speed class suits moderate-frequency digital signal processing tasks. Verify that the 5-volt logic levels align with the host microcontroller I/O specifications. Consider the 100-pin footprint constraints during printed circuit board layout planning.
This part belongs to the IDT 7024S series of dual-port SRAMs, originally developed by Integrated Device Technology before its acquisition by Renesas. The series is designed for applications needing fast, deterministic memory access without complex arbitration protocols. The 7024S25 variant specifically targets 5-volt logic environments requiring reliable data integrity.
Official upgrade alternatives include the 7024L15PFG8. Verify pin compatibility and electrical parameter alignment before substitution.
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