7024S35GB

Memory IC Overview

The Renesas Electronics Corporation 7024S35GB is a dual-port static random-access memory (SRAM) device with a storage capacity of 64 kbit, organized as 4K words by 16 bits. It features an asynchronous parallel interface with a maximum access time of 35 ns. The component operates on a single 5V power supply within a voltage range of 4.5V to 5.5V. Designed for commercial applications, it supports an operating temperature range from 0°C to +70°C. The device is housed in an 84-pin Plastic Grid Array (PGA) package suitable for through-hole mounting.

Memory IC Feature Summary

• Provides independent read and write operations via two separate ports, allowing simultaneous access to the same memory location without conflict.
• Supports fully asynchronous operation from either port, enabling flexible integration into systems requiring non-synchronized data transfer.
• Includes on-chip hardware support for semaphore signaling and port arbitration logic to manage bus contention between the two ports.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data acquisition systems requiring simultaneous multi-port access

Memory IC Procurement Notes

Verify RoHS compliance status carefully, as documentation indicates this specific part may not meet current environmental standards. Confirm lead-free availability and check for active discontinuation notices or end-of-life notifications prior to procurement. Ensure the supplier provides valid traceability documents for the PGA-84 package type.

Memory IC Selection Notes

Select this component when a system requires true dual-port SRAM functionality with a 4Kx16 organization and 35ns speed grade. It is appropriate for designs needing through-hole assembly compatibility via the PGA-84 package. Consider alternative packages if surface-mount technology is required for the final product design.

Memory IC Part Context

This component belongs to the 7024S35 series of dual-port SRAMs manufactured by Renesas Electronics. The series is characterized by high-speed asynchronous operation and independent port control. The 'G' suffix typically denotes the plastic grid array packaging variant within this product family line.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.