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7025L20JGI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 128KBIT PARALLEL 84PLCC. Review the specifications below when checking this part for your BOM.
The 7025L20JGI8 is a dual-port static random access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 128 kilobits, organized as 8K words by 16 bits. The device features asynchronous parallel interface operation with a maximum access time of 20 nanoseconds and a write cycle time of 20 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports an industrial temperature range from -40°C to +85°C. The component is housed in an 84-lead Plastic Leadless Chip Carrier (PLCC) package.
This component has been officially declared obsolete and is no longer in production. Verification of availability should focus on identifying approved replacement parts or alternative packaging types provided by the manufacturer. Procurement planning must account for end-of-life status and potential supply chain constraints associated with discontinued semiconductor products.
Designers should evaluate the 7025L20JGI8 based on its specific 8Kx16 organization and 20ns speed grade. The 84-PLCC package requires appropriate footprint design considerations. Compatibility checks must ensure that the target system supports the required 4.5V to 5.5V power supply rails and asynchronous timing protocols defined for this memory family.
The 7025L20JGI8 belongs to the 7025L series of dual-port SRAMs from Renesas Electronics. This series is characterized by high-speed asynchronous operation and robust performance across industrial temperature ranges. The 'L' designation typically indicates leaded packaging options such as PLCC, distinguishing it from surface-mount variants like TQFP or LQFP found in other series members.
The 7025S35PFI8 is listed as an upgrade substitute. Designers must verify pin compatibility and electrical parameter differences between the original 20ns part and the 35ns replacement before implementation.
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