7026S25J8

Memory IC Overview

The Renesas Electronics Corporation 7026S25J8 is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 256 kbit, organized as 16k x 16 words. The device features an asynchronous parallel interface with a maximum access time of 25 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in an 84-PLCC package. The component is designed for commercial temperature ranges from 0°C to +70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports.

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data storage in industrial control networks

Memory IC Procurement Notes

Verify the specific suffix J8 against official datasheets to confirm package type and moisture sensitivity level. Confirm RoHS compliance status as legacy components may vary. Check for obsolescence notices or lifecycle changes directly from Renesas documentation before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a dual-port SRAM with 16-bit width and 25 ns speed is required. Ensure the system design accommodates the 84-PLCC surface mount package dimensions. Verify that the operating voltage requirements align with the 4.5 V to 5.5 V specification.

Memory IC Part Context

This part belongs to the Renesas 7026 series of high-performance dual-port SRAMs. These devices are engineered for applications requiring fast data transfer between two independent masters. The series offers various speed grades and organization options within the same package family.

Memory IC Replacement Considerations

Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully when considering alternative manufacturers.