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7026S55J is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 256KBIT PARALLEL 84PLCC. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 7026S55J is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 256 kilobits, organized as 16K words by 16 bits. The device features parallel interface technology with an access time and write cycle time of 55 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface mount installation in an 84-pin Plastic Leadless Chip Carrier (PLCC) package. The component is designed for asynchronous operation and functions within a commercial temperature range of 0°C to 70°C.
Verify the specific suffix J against official Renesas documentation to confirm the exact package variant and moisture sensitivity level. Confirm RoHS compliance status as older variants may not meet current environmental directives. Check for End-of-Life notices or discontinuance announcements prior to finalizing procurement plans.
Select this component when a non-volatile-free, high-speed dual-port memory solution is required for parallel bus architectures. Ensure the system design accommodates the 84-PLCC footprint and the 4.5V to 5.5V power supply requirements. Consider the 55ns access speed relative to the target processor clock cycles to guarantee timing compatibility.
The 7026 series represents a family of high-performance dual-port SRAMs manufactured by Renesas Electronics. These components are engineered for applications requiring concurrent read/write operations from multiple masters. The 7026S55J specifically targets general-purpose memory needs where moderate speed and large word width are prioritized over ultra-high frequency performance.
Consult official Renesas substitution guides for compatible alternatives. Verify pinout compatibility and electrical specifications before replacing.
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