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7027L15PFG8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 512KBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 7027L15PFG8 is a dual-port static random access memory (SRAM) integrated circuit. It features a storage capacity of 512 kbit, organized as 32k x 16 words. The device supports parallel interface communication with an access time of 15 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and functions at temperatures between 0°C and +70°C. The component is housed in a 100-TQFP surface-mount package.
Verify the specific suffix G8 against official Renesas documentation to confirm package and tape-and-reel specifications. Ensure compatibility with existing board layouts for the 100-TQFP form factor. Confirm moisture sensitivity level handling requirements during assembly. Validate that the 4.5V to 5.5V operating voltage aligns with the target system power rails. Check for any recent product change notices affecting manufacturing sites or materials.
Select this component when a dual-port asynchronous SRAM solution is required for systems needing independent master access. The 15 ns speed suits moderate-to-high frequency parallel bus architectures. Consider the 100-pin TQFP package constraints for PCB space. Evaluate the 5V logic compatibility against other system components. Compare against single-port alternatives if concurrent access is not necessary.
This part belongs to the Renesas 7027L series of dual-port SRAMs. The series offers various capacities and speeds for different performance tiers. The 7027L15 variant specifically targets applications requiring 15 ns access times. The L suffix typically denotes low-power consumption characteristics compared to older generations. This family supports standard parallel interfaces common in legacy and industrial designs.
Publicly confirmed substitute part numbers are not available in the provided source material.
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