70T3319S133BFGI

Memory IC Overview

The 70T3319S133BFGI is a high-speed synchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics. It features a memory organization of 256K x 18 bits, providing a total capacity of 4.5 Mbit. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a core voltage of 2.5V and accepts I/O voltages ranging from 2.4V to 2.6V. The component utilizes a parallel interface and is housed in a 208-CABGA package measuring 15x15 mm. It functions within an industrial temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Dual-port architecture enables simultaneous independent access to the same memory location by two separate controllers.
• Supports selectable pipelined or flow-through output modes for flexible data handling.
• Includes JTAG functionality for boundary scan testing and device configuration.
• Features automatic power-down capabilities controlled by chip enable signals to minimize standby power consumption.

Memory IC Applications

• High-performance networking equipment requiring low-latency data buffering
• Industrial control systems operating in extreme temperature environments
• Telecommunications infrastructure utilizing burst data transfer protocols

Memory IC Procurement Notes

Verify current availability status as this component may be subject to end-of-life notices or long lead times. Confirm that the 208-CABGA package dimensions and pinout match the target PCB footprint. Ensure supply chain sources provide authentic Renesas Electronics products to avoid counterfeit components. Check for specific RoHS compliance documentation if required by regional regulations.

Memory IC Selection Notes

Select this component when simultaneous bidirectional data access is required between two processors. The 133 MHz speed and 4.2 ns access time suit high-throughput applications. Verify compatibility with 2.5V core logic and 2.4V-2.6V I/O levels. Consider the 208-CABGA package constraints during layout design. Evaluate power management requirements against the automatic power-down features.

Memory IC Part Context

This part belongs to the 70T3319 series of synchronous dual-port SRAMs. The series offers various density and speed options optimized for burst data flows. The 70T3319 variant specifically targets applications needing 256K x 18 bit organization. It shares architectural similarities with other members like the 70T3339 and 70T3399, differing primarily in organization and speed grades.

Memory IC Replacement Considerations

Check for direct substitutes such as IDT70T3319S133BFGI. Verify pin-to-pin compatibility and electrical specifications before substitution. Review manufacturer obsolescence notices for alternative recommendations.